Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors
نویسندگان
چکیده
High performance single-walled carbon nanotube field effect transistors SWCNT-FETs fabricated with thin atomic layer deposited ALD Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10−11 A at −2.5 V Vg +7 V, a subthreshold swing of S 105 mV/decade, and a maximum on current of −12 A at a reverse gate bias of −1 V. Lack of hysteresis in IV characteristics and low low frequency noise indicate high quality oxide-nanotube interface achieved utilizing ALD Al2O3 as gate dielectrics and passivation layer. © 2007 American Institute of Physics. DOI: 10.1063/1.2724904
منابع مشابه
Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis
Single-walled carbon nanotube field effect transistors (SWNT-FETs) are fabricated by two different alignment techniques. The first technique is based on direct synthesis of an aligned SWNTs array on quartz wafer using chemical vapor deposition. The transistor with three SWNTs and atomic layer deposited (ALD) Al2O3 gate oxide shows a contact resistance of 280 KX, a maximum on-current of 7 lA, an...
متن کاملCarbon nanotube thin film transistors based on aerosol methods.
We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enabl...
متن کاملSurface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3
Related Articles Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface J. Appl. Phys. 111, 093713 (2012) Magnetic properties of ZnO nanoclusters J. Appl. Phys. 111, 084321 (2012) Self-passivation of transparent single-walled carbon nanotube films on plastic substrates by microwave-induced rapid nanowelding Appl. Phys. Lett. 100, 163120 (2012) N...
متن کاملNanofabrication of top-gated carbon nanotube-based transistors: Probing electron-electron interactions in one-dimensional systems
Carbon nanotubes are interesting for studying the remarkable electronic properties of one-dimensional (1D) quantum systems. Electron flow in such systems is not described by Fermi liquid theory—restricted dimensionality leads to the appearance of collective excitations—or Luttinger liquid behavior. Previous studies have probed Luttinger liquid behavior by tunneling into or between one-dimension...
متن کاملHigh-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer characteristics. The hysteresis is often attributed to charge trapping in the dielectric layer between the nanotube and the gate. We find that this mem...
متن کامل